Product category:
Discrete Power Devices
News Release from: International Rectifier | Subject: IRF6641TRPbF
Edited by the Electronicstalk Editorial
Team on 06 November 2006
Power MOSFET boasts 95% efficiency
Power MOSFET features benchmark DirectFET package technology paired with IR's latest 200V HEXFET MOSFET silicon technology to achieve 95% efficiency.
International Rectifier has introduced the IRF6641TRPbF power MOSFET featuring IR's benchmark DirectFET package technology paired with IR's latest 200V HEXFET MOSFET silicon technology to achieve 95% efficiency IR's new 200V DirectFET device is designed for use in isolated DC/DC convertor designs operating from a universal input range (36 to 75V)
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
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With its extremely low typical 10V on-resistance of 51mohm and reduced gate charge, the IRF6641TRPbF is ideally suited as a synchronous rectifier MOSFET in high frequency, high efficiency DC/DC convertors powering high current loads, the latest generation of intermediate bus convertors, DC motor drives, and even 48V inverters used to convert power from wind turbines.
It is also suitable for synchronous rectification in high current AC/DC convertors used to power computers and telecomms servers operating from a 48V universal input voltage range.
The 200V DirectFET MOSFET achieves a current rating up to 25A in a footprint the size of an SO-8 with only a 0.7mm profile, while minimising gate charge and package inductance to reduce both conduction and switching losses.
The board space savings alone of one DirectFET MOSFET versus two or three SO-8 devices is more than 50%.
IR's new device offers superior performance in many applications.
In comparing the in-circuit efficiency of IRF6641TRPbF to other enhanced SO-8 devices in secondary-side synchronous rectification sockets, the new DirectFET device delivers a 0.4% efficiency improvement when the same numbers of enhanced SO-8 devices are used per socket.
Additionally, IR's new device provides the same 7A full-load efficiency when the numbers of enhanced SO-8 devices are doubled-up at each socket.
In this same analysis, the MOSFET temperatures are lowest in the circuit using two IRF6641TRPBF devices per socket.
The device has a common MZ footprint allowing an easy migration path to other mid-voltage DirectFET MOSFETs such as the lower voltage, 100V IRF6662 device in applications where the current levels increase and lower voltage is acceptable.
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