Product category:
Analogue and Mixed Signal ICs
News Release from: International Rectifier | Subject: IRS20955/IRFI4024Hx chipset
Edited by the Electronicstalk Editorial
Team on 09 January 2007
Class D audio chipset cuts board space
International Rectifier has introduced a Class D audio chipset comprising the IRS20955 200V digital audio driver IC and the IRFI4024Hx series of digital audio MOSFETs.
International Rectifier has introduced a Class D audio chipset comprising the IRS20955 200V digital audio driver IC and the IRFI4024Hx series of digital audio MOSFETs Compared with typical designs, the new IC reduces PCB board space by 50% for Class D audio amplifiers up to 500W, and the MOSFETs reduce power switch part count of the Class D stage by 50% for the entire mid-voltage range of mid- and high-power amplifiers for home theatre applications, professional amplifiers, musical instruments and car entertainment
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
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International Rectifier has introduced the world's first 1000V radiation-hardened power MOSFET.
MOSFETs improve 12V-input converter efficiency
Two new 20V HEXFET power MOSFET families from International Rectifier are designed to increase efficiency by up to 4% in 12V-input DC/DC convertors.
The IRS20955 IC delivers higher performance, protection and efficiency in the compact form factor required for ever-shrinking Class D audio designs.
When combined with IR's Class D audio driver IC, the new integrated half-bridge digital audio MOSFETs provide a scalable solution to enhance performance and sound quality while cutting the power switch part count in half.
The IRS20955(S)(TR)PBF IC reduces external component count by up to 27 components and features a unique floating, 3.3/5V logic-compatible, PWM input that eliminates seven external level-shift components for Class D audio applications using a half-bridge topology and dual power supply.
Further reading
MOSFETs improve power density on both sides
New from International Rectifier are two TO-220-packaged HEXFET power MOSFETs that maximise power density and performance in primary- and secondary-side DC/DC convertor circuits.
Rad-hard MOSFETs protect and survive
With high radiation hardness and unparalleled single event effect (SEE) immunity, International Rectifier's new R5 MOSFETs are well suited for systems that must survive penetrating gamma rays.
Greater protection is achieved with an integrated programmable bidirectional current-sensing feature with self-reset function that allows the high-voltage IC to sense the exact point of the switching cycle.
Current is sensed at the correct moment allowing the IC to optimise the overcurrent protection circuit.
In addition, this offers considerable space-saving benefits with the elimination of a large current-sense resistor.
The IC has built-in protection control logic that eliminates 11 components and shrinks board footprint, compared with existing audio IC reference designs.
The new audio IC has preset internal deadtime generation to enable accurate and stable gate switch timing, while delivering optimum deadtime settings for improved total harmonic distortion (THD) performance and high noise immunity.
In addition to simplifying design, this deadtime feature reduces part count by as much as eight external components, and reduces board space by eliminating large package types.
Operating up to 800kHz, the IRS20955 digital audio IC is also suitable for single-supply full-bridge designs.
In addition to low on-resistance, the series of half-bridge N-channel MOSFETs provide optimised gate charge, body-diode reverse recovery and internal gate resistance to improve key Class D audio amplifier performance parameters such as efficiency, THD and EMI.
For example, the IRFI4024H-117P features a typical on-resistance of 48mohm for high efficiency, and a typical gate charge of 8.9nC and switching charge of 4.3nC for improved THD.
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