Power MOSFET is flexible about its input voltage

150V MOSFET for isolated DC/DC convertors operates from a wide range, 36 to 75V universal telecommunications input and 48V fixed input systems.

International Rectifier has launched the IRF6643PbF, a 150V DirectFET MOSFET for isolated DC/DC convertors operating from a wide range, 36 to 75V universal telecommunications input and 48V fixed input systems.

Combining IR's advanced DirectFET packaging technology and its next-generation HEXFET power MOSFET silicon, the new DirectFET device achieves a current rating up to 35 amperes while providing superior thermal performance and higher efficiency in a footprint equal to that of a low-profile SO-8 package.

The latest device in IR's DirectFET line-up minimises conduction, switching and reverse-recovery losses by continuing to improve the critical parameters that determine the performance of power MOSFETs: on-resistance, gate charge and gate-drain charge.

These improvements enable operation at higher current levels, while maintaining the smaller form factor of a single MOSFET.

By reducing board space by more than 50%, a single DirectFET MOSFET now can take the place of two or three SO-8 packages.

The device's extremely low typical 10V on-resistance of 29mohm and low inductance makes it well suited for high-current synchronous rectifier sockets.

Also, with its very low 39nC gate charge and 11nC gate-drain charge, the IRF6643TRPbF functions well as a primary-side MOSFET in isolated or intermediate DC bus convertors.

The IRF6643TRPbF is packaged in the medium-sized (MZ) DirectFET package.

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