MOSFET chipset raises bar on efficiency

Chipset powers high-current DC/DC convertors used in advanced telecomms and datacomms systems, notebook, high-end desktops and servers.

International Rectifier has a new DirectFET MOSFET chipset for high-current DC/DC convertors used in advanced telecomms and datacomms systems, notebook, high-end desktops and servers.

Developed using the latest HEXFET MOSFET silicon technology and IR's benchmark DirectFET packaging technology, the IRF6712S control FET and IRF6716M sync FET are characterised with extremely low package inductance and device on-state resistance, gate charge and gate-to-drain charge to achieve high efficiency and superior thermal performance.

This allows operation up to 25A per phase, in a small, sleek form factor.

With low typical on-resistance of only 1.2mohm at 10V gate-source voltage and 2.0mohm at 4.5V, the IRF6716M MOSFET achieves the lowest on-resistance for a 25V device, making it well suited to synchronous rectifier sockets for high-frequency, high-current DC/DC convertors used in applications that power high-current loads.

The IRF6716M features a slim 0.7mm profile and the MX pad outline common to two generations of devices, allowing an easy migration from existing low-voltage DirectFET MOSFETs.

Optimised for high-current applications where a single control MOSFET is desired, the IRF6712S achieves a low gate charge of 13nC and gate-to-drain charge of 4.4nC combined with low typical on-state resistance of 3.8mohm at 10V and 6.7mohm at 4.5V.

The IRF6712S also presents a 0.7mm profile and the SQ pad outline common to two generations of control devices, allowing an easy migration from existing low-voltage MOSFETs.

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