Product category:
Discrete Power Devices
News Release from: International Rectifier | Subject: 600V IGBTs
Edited by the Electronicstalk Editorial
Team on 06 March 2008
IGBTs reduce power dissipation for UPS
systems
Application-specific devices use IR's latest-generation field stop trench technology to reduce conduction and switching losses.
A family of 600V insulated gate bipolar transistors (IGBTs) reduces power dissipation by up to 30% in uninterruptible power supply (UPS) and solar inverter applications up to 3kW The new application-specific devices use IR's latest-generation field stop trench technology to reduce conduction and switching losses, and are optimised for switching at 20kHz with low short circuit requirements, enabling higher efficiency power conversion in UPS and solar inverter applications
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
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Traditionally, IGBT devices have excessive switching losses at the frequencies used in UPS and solar inverters.
IR's new Trench IGBT devices have lower switching energy coupled with low conduction losses and provide higher efficiency, reducing the size of the unit and the cost of power generation to the end user.
Copackaged with ultrafast soft recovery diodes, the new family of IGBTs has lower collector-to-emitter saturation voltage and total switching energy than punchthrough and nonpunchthrough type IGBTs.
In addition, the internal ultrafast soft recovery diode improves efficiency and reduces EMI.
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