Product category:
Memory Devices and Modules
News Release from: Solid State Supplies | Subject: FM24C04 4Kbit FRAM
Edited by the Electronicstalk Editorial
Team on 02 March 2001
Ferroelectric RAM handles repeated
rewrites
The FM24C04 4Kbit FRAM serial memory from Solid State Supplies is ideal for nonvolatile memory applications which require frequent or rapid writing.
Ideal for nonvolatile memory applications which require frequent or rapid writing, the FM24C04 4Kbit FRAM serial memory from Solid State Supplies will handle both data collection where the number of write cycles may be critical, as well as demanding industrial controls where the long write time required by EEPROMs may cause data loss Unlike serial EEPROMs, the FM24C04 uses an advanced ferroelectric process to perform write operations at bus speed without any delays
This article was originally published on Electronicstalk on 6 Feb 2001 at 8.00am (UK)
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Data are written to the array almost instantly after being transferred to the device.
The next bus cycle may commence immediately.
The FM24C04 will also support up to 10 billion read/write cycles, which is far more than most systems will ever require from a serial memory.
A drop-in replacement for a serial EEPROM, the memory array is organised as 512 x 8bit architecture and is accessed using an industry standard two-wire interface.
The fast write operation of the FM24C04 is of particular benefit in a high noise environment where FRAM is less susceptible to corruption.
With up to 400 kHz maximum bus frequency, the FM24C04 has true 5V operation with just 150uA active current and 10uA standby current.
To satisfy the requirements of long term operating procedures, the device will retain data for a decade in an environment with an ambient temperature of 85C.
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