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Product category: Discrete Power Devices
News Release from: Solid State Supplies | Subject: UPSC range
Edited by the Electronicstalk Editorial Team on 17 October 2001

Silicon carbide diodes raise the voltage
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Designed for those applications where a conventional Schottky diode runs out of voltage headroom, the new UPSC range from Solid State Supplies can operate at up to 600V.

Designed for those applications where a conventional Schottky diode runs out of voltage headroom, the new UPSC range from Solid State Supplies can operate at up to 600V As with other majority carrier devices, the reverse recovery time of silicon carbide devices is uninhibited by minority carrier recombination delays and instead the speed of operation is purely a function of junction capacitance which is in the region of 15-30pF

"Most Schottky diode processes will not operate above 100V and at this voltage the reverse leakage starts to increase to such a level that they overwhelm the Vf losses that are normally used as the performance yardstick", commented Phil Masters who is supporting this technology at SSS.

"With this SiC process however, the Ir figure remains in the region of 20uA at full rated voltage", he added.

Both 1 and 4A devices are now available in surface mountable packages that have a small footprint and are designed with auto-insertion in mind.

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