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Product category: Memory Devices and Modules
News Release from: Silicon Storage Technology | Subject: 32 Series ComboMemory
Edited by the Electronicstalk Editorial Team on 08 August 2003

NOR Flash joins combination memory
devices

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Silicon Storage Technology has released seven new products in its second-generation 32 Series ComboMemory product family.

Silicon Storage Technology has released seven new products in its second-generation 32 Series ComboMemory product family The new additions to the ComboMemory family blend up to 64Mbit of SST's 0.18-micron self-aligned, second-generation SuperFlash technology with up to 32Mbit of low-power pseudostatic RAM (PSRAM), resulting in a unique solution that offers designers cost, space and power savings as well as improved system performance and simplified system design over discrete Flash and SRAM devices

SST's new family leverages the company's recently announced, high-performance, high-density Multi-Purpose Flash Plus (MPF+) family as well as its new generation Flash technology.

These products represent highly integrated solutions designed specifically to meet the power and performance requirements of low- to mid-range mobile phones, wireless modems, personal digital assistants (PDAs) and other mobile communication devices.

Like all of SST's ComboMemory products, the new solutions incorporate the company's SoftPartition Flash memory architecture, allowing designers to seamlessly partition the data and program code into granular 2Kword sectors and enabling them to balance the amount of memory used for code and data storage depending on the application.

In addition, SST's ComboMemory products offer concurrent memory operations, a feature that maximises system throughput.

As a result, SST's ComboMemory devices are able to simultaneously read from or write to the SRAM bank while erasing or programming in the flash memory bank.

The SRAM memory bank can be read or written while the flash memory bank performs sector erase, bank erase or word program concurrently.

"With our new second-generation, SuperFlash-based ComboMemory products, SST furthers its drive to be the leading flash memory provider for the wireless communication market", said Paul Lui, Vice President, Special Products Group at SST.

"Increasingly, customers in the low- to mid-range cellular phone market are demanding higher density combinations of flash and SRAM to meet their increasing storage requirements.

With up to 64Mbit of Flash and up to 32Mbit of PSRAM, our new ComboMemory products offer the ideal combination of density, performance, optimised features and package size for this market".

According to Lui, the ComboMemory products also reduce the electromagnetic interference (EMI) output in system designs, which is critical for mobile communication devices.

And key to these mobile applications, the new ComboMemory family is offered in a very small (8 x 10mm) multichip package (MCP), representing a 19% shrink in package size from previous devices.

SST's ComboMemory products can replace as many as three discrete components (Flash, SRAM and EEPROM) in traditional mobile phone applications, resulting in significant cost, space and power savings, all of which are critical factors in today's battery- and price-sensitive mobile phones and other mobile communication devices.

Using SST's 0.18-micron, self-aligned SuperFlash technology, the new ComboMemory products deliver high performance, superior reliability and low-power operation.

With chip erase operations 1000 times faster than conventional flash, SST's customers can erase their Flash devices during manufacturing in 40ms instead of the 1min or more typical with most Flash alternatives, saving customers both time and money.

As for in-system programming, individual sectors can be erased 50 to 100 times faster than conventional Flash, thereby reducing power consumption and providing a better end-user experience.

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