Product category:
Memory Devices and Modules
News Release from: Spansion | Subject: MirrorBit ORNAND2
Edited by the Electronicstalk Editorial
Team on 16 November 2007
Next-generation ORNAND targets NAND
applications
MirrorBit ORNAND2 architecture will use a SONOS-like memory cell connected in a NAND memory array at 45nm, featuring fast write performance with high packing density.
Spansion has announced plans for the next generation of its successful data storage product family, the MirrorBit ORNAND architecture Leveraging Spansion's proprietary charge trapping storage technology, the new MirrorBit ORNAND2 architecture will use a SONOS-like memory cell connected in a NAND memory array at 45nm, featuring fast write performance with high packing density - delivering the performance and cost advantages of NAND technology with the compelling cost structure of 300mm wafers
This article was originally published on Electronicstalk on 4 Jun 2008 at 8.00am (UK)
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Products planned for the new architecture will primarily target data storage applications in the integrated Flash memory markets where customers value differentiated, high-value solutions.
The new architecture will expand the current MirrorBit ORNAND portfolio with a new family of solutions at 45nm that require 25% fewer mask layers than Spansion's 65nm MirrorBit ORNAND, and support superior quality over floating-gate NAND solutions.
MirrorBit ORNAND2 products are expected to be available in early 2009.
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The new architecture is based on Spansion's proprietary MirrorBit technology - with MirrorBit solutions now shipping at a US $2 billion run rate and representing 22% of the entire NOR Flash memory segment.
By leveraging a common technology platform and the expected scalability benefits of MirrorBit technology below 40nm, the same fabs can be used to efficiently produce MirrorBit NOR, ORNAND and ORNAND2 products.
"Spansion is the only company to have successfully ramped charge trapping storage technology in high volume", says Dr Lou Parrillo, Executive Vice President, Research and Development, Spansion.
"With our proprietary leading-edge MirrorBit technology, 300mm wafer capability and planned NAND-equivalent performance, we can further expand our product roadmap and accelerate our MirrorBit technology momentum".
Spansion is leveraging the expertise learned in ramping its proprietary MirrorBit technology to develop a proprietary SONOS-like cell for MirrorBit ORNAND2 technology.
Unlike previous unsuccessful industry attempts to produce a commercially viable SONOS cell, Spansion expects its proprietary approach to deliver optimal performance through architectural innovation and proven production technology enabling a faster ramp to production.
"As technologies move down the scaling curve, conventional floating gate Flash memory is running out of steam at 45nm processes and below".
"Many companies are proposing charge-trapping technologies as an option", says Jim Handy, Director of Objective Analysis.
"Spansion has had a charge trapping process in production for four years, giving the company a big head start on its competitors".
"The company's next-generation MirrorBit ORNAND2 architecture, a NAND array based on a SONOS-like cell structure, will further use this leadership to expand Spansion's market opportunities into areas currently served by NAND alone".
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