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Product category: Discrete Power Devices
News Release from: STMicroelectronics | Subject: STV300NH02L
Edited by the Electronicstalk Editorial Team on 03 December 2007

MOSFET cuts on-resistance to new lows

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High-current N-channel device is intended particularly for the paralleling configuration power supplies that are widely used to increase system reliability in server applications.

A new power MOSFET from STMicroelectronics features exceptionally low micro-ohm on-resistance to reduce losses and increase efficiency in demanding power supply systems This new high-current N-channel device is intended particularly for the paralleling configuration power supplies that are widely used to increase system reliability in server applications

ST has developed an innovative ribbon-bonding technology that delivers a low typical on-resistance of 0.8mohm, setting a new industry bench mark for high-current MOSFETs.

The 20V device, which is also ideal for reducing secondary rectification losses in high-efficiency DC/DC convertors, provides excellent protection under short-circuit conditions, with a very low turn-off time.

Paralleling of power supplies is frequently used to provide redundancy in critical systems or to increase capacity.

Originally, diodes were used for this function, but they have been replaced by MOSFETs to achieve higher performance.

Now, the very low losses of the STV300NH02L deliver a further significant step forward in power-supply efficiency.

The STV300NH02L is available now in a PowerSO-10 package, priced at US $4.50 in quantities of 1000 pieces.

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