Product category:
Discrete Power Devices
News Release from: STMicroelectronics | Subject: STD60N3LH5 and STD85N3LH5
Edited by the Electronicstalk Editorial
Team on 21 February 2008
MOSFETs cut on-resistance and gate
charge
STripFET technology makes use of very high equivalent cell density and smaller cell features to achieve extremely low on-resistance and losses, while using less silicon area.
Two new power MOSFETs from STMicroelectronics are intended for the most demanding DC/DC convertor applications The new devices use the latest version of ST's proprietary STripFET technology to deliver extremely low conduction and switching losses, up to 3W lower in a typical voltage regulator module, and to achieve the lowest figure of merit among competing devices
This article was originally published on Electronicstalk on 8 Nov 2004 at 8.00am (UK)
Related stories
Driver drives LED efficiency
STMicroelectronics has introduced a new white LED driver with specific features for small LCD module backlight and high efficiency white LED power supply for portable applications.
Single-chip tuner cuts set-top box parts count
The STB6000 single-chip silicon tuner is designed to replace complex discrete component tuners in set-top boxes used for receiving digital TV or web-based material via satellite.
In addition to the high efficiency, the new MOSFETs allow practical circuits to operate at higher-than-normal switching frequencies, enabling a reduction in the size of the circuit's passive components.
For example, a 10% increase in switching frequency can lead to a 10% reduction in passive components required by the output filter.
The STD60N3LH5 and STD85N3LH5 are the first in a new series of STripFET V devices which provide superior performance and increased efficiency as a result of low on-resistance and significantly lower total gate charge.
Both are 30V (BVDSS) devices.
With gate charge of just 8.8nC and on-resistance of 7.2mohm at 10V, the STD60N3LH5 is an ideal choice as a control FET in nonisolated DC/DC step-down convertors.
The 4.2mohm on-resistance at 10V of the STD85N3LH5, with a gate charge of 14nC, makes it an optimal choice as a synchronous FET.
Both devices are produced in DPAK and IPAK packages and will be soon available in other package options including SO-8, PowerFlat 3.3x3.3, PowerFlat 6x5, and PolarPAK.
The new series of STripFET V devices are ideal for notebook, server, telecom and networking applications.
ST's STripFET technology makes use of very high equivalent cell density and smaller cell features to achieve extremely low on-resistance and losses, while using less silicon area.
STripFET V is the latest generation of this technology, achieving approximately 35% improvement in the critical indicator of silicon resistance and active area, plus some 25% reduction in total gate charge per active area, compared with the earlier generation.
Both devices are in full production.
The STD60N3LH5 is priced at US $0.65 in quantities of 2500 pieces, and the STD85N3LH5 is priced at US $0.95 in quantities of 2500 pieces.
• STMicroelectronics: contact details and other news
• Email this article to a colleague
• Register for the free Electronicstalk email newsletter
• Electronicstalk Home Page
Search the Pro-Talk network of sites
