New process boosts power MOSFET specs

The new NP-series of power MOSFETs combines NEC's innovative trench technology with an advanced packaging solution to achieve much higher current ratings.

Sunrise Electronics has a new generation of power mosfets from NEC Electronics.

With the new NP-series, NEC has reinforced its technology leadership with a product line that combines the company's innovative trench technology with an advanced packaging solution to achieve much higher current ratings.

UMOS-4 is a new-generation of NEC's leading UMOS process technology.

With an ultrafine design rule of 0.25um, this process achieves a cell density of well over 160 million cells per square inch.

This new generation of devices features super-low on-resistance of less no more than 1.9mohm (40V, TO-263).

The devices are also robust, with a rated junction temperature of 175C.

At the same time, NEC has developed "advanced" TO-263 and TO-252 housings that significantly increase the power ratings of these packages.

The advanced TO-263 package is compatible with the standard package but uses four 400um bonding wires to increase the current rating to over 100A.

Similarly, the advanced TO-252 package uses two bonding wires of 300um to achieve current ratings in excess of 60A.

This new generation of devices has been developed to meet increasing demand for higher current ratings in high-power applications like integrated starter generators and electrical power steering.

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