MOSFETs stay stable at higher temperatures

Sunrise Electronics has a new series of power MOSFET devices manufactured in NEC's advanced UMOS-4 technology.

Sunrise Electronics has a new series of power MOSFET devices manufactured in NEC's advanced UMOS-4 technology.

NEC's well known NP-series has now been extended by the development of 15 new products, targeting markets for low voltage devices, like the automotive sector.

The products are available in popular TO-252 and TO-263 compliant packages and feature ultralow resistance, high current performance and temperature stability up to 175C.

This new power MOSFET NP-series of devices makes the most of the company's innovative UMOS-4 trench technology and combines it with an advanced packaging solution.

UMOS-4 is a new-generation UMOS process technology.

With an ultra-fine design rule of 0.25um, the process achieves a cell density of well over 180Mcell/in2.

The main product features are ultralow onm-resistance, down to 1.7mohm maximum at 30V, TO-263ZP), a new industry-leading high-current performance of up to 110A and temperature stability up to 175C.

The products cover the low voltage range (30, 40 and 55V).

These technological features are combined with a new package concept.

In addition to standard TO-252 and TO-263 packages, the NP-series now includes devices in NEC's newly developed advanced TO-263/TO-263ZP package, where the number of source bond wires has been increased from two to four.

Still retaining the standard TO-263 footprint, this new approach allows higher current ratings and lower resistances.

The new products will allow Sunrise to address the demand for increased supply current in high-power applications like integrated starter generators (ISG), electrical power steering (EPS) and fan control and also in standard applications like DC/DC convertors and motor control.

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