Toshiba signs off at 90nm with Star-RCXT

Toshiba has standardised on Star-RCXT as the parasitic extraction tool for its 90nm TC300 design technology.

Toshiba has standardised on Star-RCXT as the parasitic extraction tool for its 90nm TC300 design technology.

Star-RCXT's industry-first support for key 90nm extraction capabilities, including in-die process variation, has enabled Toshiba to achieve high accuracy and performance for timing signoff.

"We collaborated with Synopsys to address our advanced 90nm extraction challenges", said Shinichi Imai, General Manager of the System LSI Design Division at Toshiba Corporation Semiconductor Company.

"During our exhaustive validation, we concluded that Star-RCXT offered the best support for advanced 90nm features, such as in-die process variation and metal fill.

In addition, its high accuracy and performance led us to standardise on Star-RCXT for our 90nm TC300 ASIC signoff flow".

Star-RCXT's support of key 90nm process capabilities includes in-die process variation solutions, such as selective process biasing and local density effects on thickness, and metal fill.

By modelling such advanced silicon process features, Star-RCXT extracts highly accurate RC parasitics to help ensure rapid timing closure and signoff.

"Support for advanced silicon process features is essential for accurate timing signoff at the 90nm node", said Antun Domic, Senior Vice President and General Manager, IC Implementation Business Unit at Synopsys.

"Toshiba's adoption of Star-RCXT for its 90nm ASIC design flow demonstrates its confidence in the tool's accuracy at the 90nm level".

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