Product category:
Design and Development Software
News Release from: Synopsys | Subject: PSM technology
Edited by the Electronicstalk Editorial
Team on 21 September 2006
Mask technology boosts SRAM yields
Samsung has extended its use of Synopsys' phase-shift mask (PSM) technology for production of its high-performance SRAM devices.
Samsung has extended its use of Synopsys' phase-shift mask (PSM) technology for production of its high-performance SRAM devices This key technology, which is part of Synopsys' comprehensive design for manufacturing (DFM) solution, enables Samsung to enhance yield and maximise chip performance through tight critical dimension (CD) control over the lithography process
This article was originally published on Electronicstalk on 19 Apr 2001 at 8.00am (UK)
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At advanced technology nodes, optical distortions and other lithographic effects cause larger features to deform and smaller features to disappear altogether.
The resulting variations can significantly decrease performance or lead to yield loss.
Synopsys PSM technology enables designers to enhance lithography resolution while simultaneously shrinking the width of device feature sizes, thereby improving chip performance and increasing yield.
In addition, designers can also decrease leakage current.
As a result, Synopsys PSM technology is being increasingly deployed by high-performance SoC manufacturers worldwide.
"We work closely with our customers to develop processes that accelerate high-yield chip production on advanced process nodes", said Anantha Sethuraman, Vice President of Marketing for DFM, Synopsys.
"Synopsys' PSM technology is a proven solution for delivering the lithography resolution required for advanced, high-speed SRAM ICs".
"Our success with Samsung further validates Synopsys' leadership position in providing a comprehensive DFM solution that accelerates time to entitled yield".
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