Product category:
Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: MG400A2YM60 power MOSFET module
Edited by the Electronicstalk Editorial
Team on 02 March 2001
MOSFET module has built-in temperature
sensors
The MG400A2YM60 silicon N-channel power MOSFET module from Toshiba incorporates both a thermistor to detect case temperature and an integrated thermal sensor diode to monitor die temperature.
The MG400A2YM60 silicon N-channel power mosfet module from Toshiba incorporates both a thermistor to detect case temperature and an integrated thermal sensor diode to monitor die temperature Designed to achieve the high levels of reliability demanded in the automotive environment, the new 80V/400A module is primarily aimed at starter-motor applications within 42V systems
The device is fabricated using trench-gate mosfet technology in a half-bridge configuration, delivering a low RDS(on) of typically 1mohm at 25C, with a low inductance of less than 10nH between the P and N power terminals.
Isolation voltage is specified as 2500VAC, and the module will operate in ambient temperatures ranging from -40 to +125C.
Equipped with industry-standard AMP CAP automotive connectors, the MG400A2YM60 has overall dimensions of 106.0 x 48.0 x 34.2mm.
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