Product category:
Memory Devices and Modules
News Release from: Toshiba Electronics Europe | Subject: 18Mbit NtRAM family
Edited by the Electronicstalk Editorial
Team on 07 June 2001
High-density low-voltage network
memories
The latest high-speed synchronous SRAM from Toshiba combines high memory density with low operating voltage to save space and reduce power requirements in high-speed networking systems.
The latest high-speed synchronous SRAM from Toshiba combines high memory density with the industry's lowest operating voltage to save space and reduce power requirements in high-speed networking systems and other designs requiring wide-bandwidth performance Suited to networking applications ranging from telecomms switching and voice over IP (VoIP) to high-speed ATM communications, devices in the new 18Mbit no-turnaround RAM (NtRAM) range are supplied in compact, low-profile 100-pin TQFP packaging and operate from a 2.5V supply
This article was originally published on Electronicstalk on 8 Nov 2004 at 8.00am (UK)
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The memory is organised as 1M x 18bit or 512K x 36bit.
NtRAM offers high-bandwidth operation by eliminating dead cycles during read-to-write and write-to-read transitions.
This means that data can be transferred on every bus cycle, leading to increased performance by allowing maximum bus throughput for any given system topology.
Available in 133, 150 and 167MHz pipeline burst and 83 and 75MHz flow-through options, the new 18Mbit NtRAM family delivers fast cycle times down to only 6.0ns and maximum access times as low as 3.6ns.
All of the devices incorporate an LVTTL-compatible interface and feature a snooze mode pin to enable power saving when the memory is not operational.
Samples are available now.
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