ESD-protected MOSFETs keep a low profile

Toshiba Electronics has used its latest trench semiconductor technology to produce high-current, ESD-protected single and dual MOSFET devices in the industry's lowest profile packaging.

Toshiba Electronics has used its latest trench semiconductor technology to produce high-current, ESD-protected single and dual mosfet devices in the industry's lowest profile packaging.

Toshiba's new TPC6 mosfets are supplied in the company's new VS-6 six-pin package, which has a board mounting footprint of 3.1 x 1.8mm and a profile of just 0.85mm.

The miniature size of the devices makes them ideal for portable, battery-powered equipment such as PDAs, digital cameras, toys and tools, while integral ESD protection will be particularly suitable for mobile phones.

The devices will also be ideal for designers looking to save space and reduce component count in power management schemes for hard disks and set top boxes.

Offering a 70% reduction of on resistance (RDS(ON)) when compared with devices that use conventional planar silicon structures, the new trench-based VS-6 mosfets have maximum power dissipation ratings of 2.2W and maximum current ratings up to 6A.

Single and dual mosfet configurations can be supplied in the packages and both n- and p-channel versions are available.

All the devices feature a built-in Zener diode between gate and source.

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