Product category:
Memory Devices and Modules
News Release from: Toshiba Electronics Europe | Subject: TC58FVT64 64Mbit NOR Flash
Edited by the Electronicstalk Editorial
Team on 29 June 2001
Shallow trench isolation boosts NOR
Flash memories
The first 64Mbit NOR Flash memory devices to feature shallow trench insulation deliver space and power savings with higher performance and lower noise than conventional NOR devices.
The first 64Mbit NOR Flash memory devices to feature a shallow trench insulation (STI) silicon structure deliver significant space and power savings while offering higher performance and lower noise operation than devices based on conventional NOR technology Toshiba's TC58FVT64 64Mbit NOR Flash memory is supplied in a 48-pin TSOP, and is available with organisations of either 8M x 8bit or 16M x 4bit
This article was originally published on Electronicstalk on 8 Nov 2004 at 8.00am (UK)
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Designed to operate with voltages down to 2.7V, the memory incorporates read, program and erase commands that are fully JEDEC-compliant to ensure full compatibility with microprocessor interfaces.
Originally developed for DRAM memory, the STI silicon structure has allowed Toshiba to place the NOR cells much closer together than has previously been possible.
This leads to better performance, lower power consumption and lower noise operation while allowing significant reductions in die size.
The new 64Mbit NOR memory provides simultaneous read/write operation that improves processing speed by allowing data to be read during a write or erase operation.
Performance is further enhanced by a channel erase design that uses the total area of the floating gate to transfer or erase electrons from the gate.
This differs from conventional NOR, which uses only the edge of the floating gate and source for electron transmission.
As a result, the new memory offers increased erasing speeds.
In addition, a shielded bit line enables much higher read speeds by reducing noise and eliminating interference from neighbouring lines.
Toshiba's TC58FVT64 64Mbit NOR Flash memory offers access times down to 90ns and requires a current consumption of just 10uA when on standby.
Typical current consumptions for read and program/erase functions are 30 and 15mA, respectively.
In addition to the discrete product, Toshiba is also offering multichip packages that integrate SRAM alongside the new NOR Flash memory.
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