Product category:
Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: GT20J321
Edited by the Electronicstalk Editorial
Team on 26 October 2001
Lower losses from speedy IGBT
A new IGBT from Toshiba combines a compact design with very high-speed and low switching loss operation and is targeted at high-frequency applications such as UPSs and motor drives.
A new IGBT from Toshiba combines a compact design with very high-speed and low switching loss operation and is targeted at high-frequency applications such as uninterruptible power supplies and motor control circuits Supplied in a TO-220IS three-pin package, the GT20J321 fast switching (FS) 600V IGBT is suited to applications that require operation at up to 50kHz
This article was originally published on Electronicstalk on 15 Oct 2001 at 8.00am (UK)
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IGBTs keep getting faster
Toshiba Electronics is developing a next generation of IGBT technology that will be aimed at higher-frequency applications ranging from UPSs to switch mode power supplies.
The device offers a maximum current rating of 20A and a low typical saturation voltage (VCE(sat)) of just 2.0V.
The GT20J321 series represents the fourth generation of Toshiba's high-power IGBT technology and is based on a new NPT (non-punch-through) wafer structure.
This structure integrates the company's trench semiconductor process for low VCE(sat) and a low-injection 'enhancement mode' N-channel technology to deliver fast switching.
An integrated fast recovery diode (FRD) between emitter and collector further contributes to device performance.
Typical rise and fall time for the new IGBT are rated at 0.04 and 0.03us, respectively.
Respective turn-on and turn-off switching losses of 0.40 and 0.43mJ ensure a total switching loss that is as much as 30% less than previous generations of IGBT technology.
Designed for use across a broad range of environments, the GT20J321 FS IGBT will operate with a junction temperature up to 150C and has a typical collector power dissipation of 40W (at 25C).
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