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Product category: Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: GT15J121
Edited by the Electronicstalk Editorial Team on 04 February 2002

Faster-switching IGBTs save space and
cut losses

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Toshiba Electronics has released the first in a series of ultra fast switching (UFS) IGBTs that will save space and minimise losses in high-speed switching applications operating at up to 150kHz.

Toshiba Electronics has released the first in a series of ultra fast switching (UFS) IGBTs that will save space and minimise losses in high-speed switching applications operating with frequencies up to 150kHz Suitable for switch mode power supply (SMPS) and uninterruptible power supply (UPS) applications, the GT15J121 is the first device in Toshiba's new IGBT-D family

The IGBT is supplied in a TO220IS package and can handle currents up to 15A.

In addition to new applications, it is expected that the low static and switching losses offered by this and other IGBT-D devices will improve the performance of existing designs that, traditionally, have been forced to use less efficient power mosfet solutions.

The GT15J121 is able to deliver high-speed operation through typical rise and typical fall times of 0.03 and 0.08us, respectively.

Low switching losses are achieved as a result of respective turn-on and turn-off loses that are just 0.23 and 0.18mJ.

Toshiba's GT15J121 is able to deliver high-speed, low-loss performance in a compact package by using the fourth generation of the company's NPT (non-punch-through) semiconductor wafer technology.

This technology integrates Toshiba's proven trench gate semiconductor structure with a low-injection 'enhancement mode' N-channel technique for lowering turn on and turn off times.

Compact die size is made possible as the trench gate structure allows much smaller cells to be fabricated than would be possible using conventional planar techniques.

(This was Electronicstalk's Top Story on 1 February 2002).

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