Product category:
Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: Two-in-one MOSFET module
Edited by the Electronicstalk Editorial
Team on 25 July 2002
Two-in-one MOSFET module tackles 42V car
systems
A new miniature, high-reliability power MOSFET module from Toshiba will significantly simplify the implementation of space-constrained automotive designs for the latest 42V power schemes.
A new miniature, high-reliability power mosfet module from Toshiba will significantly simplify the implementation of space-constrained automotive designs for the latest 42V power schemes Rated for 75V 100A operation, the two-in-one mosfet module is a half-bridge device measuring just 28 x 25 x 5mm
This article was originally published on Electronicstalk on 8 Nov 2004 at 8.00am (UK)
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Toshiba's mosfet module is based on the company's second generation U-mosfet trench gate structure (UMOS-II), which ensures a low on-resistance and improved power dissipation.
Typical drain-source on-resistance is rated at 4.0mohm.
Module electrodes are isolated from the case and isolation voltage (AC for 1min) is 100V.
Stray inductance between positive and negative terminals is rated at just 10nH.
In line with automotive requirements, an optimised solder layer between the copper substrate and the module's integrated heatsink ensures high reliability by withstanding long-term thermal cycling.
Designed for high-speed switching, the Toshiba mosfet module has typical rise and fall times of 170s and 150ns, respectively.
Respective turn-on and turn-off times are 250 and 750ns.
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