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Product category: Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: TPCS8104
Edited by the Electronicstalk Editorial Team on 28 October 2002

High-speed power MOSFET for portable
designs

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The latest miniature low-voltage power MOSFET from Toshiba is a high-speed, high-efficiency device that combines an ultra-low on-resistance of 10.3mohm with a maximum leakage current of only -10uA.

The latest miniature, low-voltage power mosfet from Toshiba is a high-speed, high-efficiency device that combines an ultra-low on-resistance of 10.3mohm with a maximum leakage current of only -10uA Supplied in a TSSOP-8 package, the new TPCS8104 has a footprint of 13.2mm2, a profile of 0.85mm, and a weight of just 0.035g

The small size and high efficiency of the device make it ideal for DC/DC convertors, power management circuitry and lithium ion battery controllers in portable applications such as mobile phones and PDAs.

Based on Toshiba's fourth generation of trench gate mosfet technology (U-MOS IV), the P-type enhancement mode TPCS8104 mosfet offers a gate threshold voltage (Vth) of between -0.8 and -2.0V and is rated for a maximum drain-source voltage (VDSS) of -30V.

Maximum gate source voltage (VGS) is +/-20V.

Toshiba's new mosfet provides a high typical forward transfer admittance of 23S and features a maximum power dissipation up to 0.6W.

Respective rise and fall times of 18 and 109ns, and a turn-on time of 23ns, ensure rapid switching with minimum losses.

The TPCS8104 can withstand channel temperatures of up to 150C and has an avalanche current rating of -11A.

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