Product category:
Memory Devices and Modules
News Release from: Toshiba Electronics Europe | Subject: 256Mbit FCRAM devices
Edited by the Electronicstalk Editorial
Team on 10 February 2003
Fast cycle RAMs deliver speed and
capacity
Two new fast cycle RAM (FCRAM) devices from Toshiba will suit high-performance network systems and other high-end applications requiring high-speed large capacity low-power memories.
Two new fast cycle RAM (FCRAM) devices from Toshiba will suit high-performance network systems and other high-end applications requiring high-speed large capacity low-power memories The new devices offer SRAM-like performance for the price of DRAM
This article was originally published on Electronicstalk on 8 Nov 2004 at 8.00am (UK)
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Toshiba's new FCRAM parts combine fast random access approaching that of high-speed SRAM with fast burst access operating at more than double the speed of conventional DRAM.
As a result, FCRAM is ideal for high-speed, high-bandwidth applications such as enterprise servers, networking and high-end telecommunications equipment, multimedia systems, digital television, and car navigation.
Available in 32M x 8 and 16M x 16bit organisations, the 256Mbit FCRAM devices are supplied in a 66-pin TSOP that is compatible with DDR SDRAM.
Maximum clock speed and datarate are 200MHz and 400Mbit/s, respectively, and random access times are down to just 25ns.
The device features a full internal pipeline architecture, integrated RAS/CAS control for low latency, and a variable write-length control that allows adjustment of write burst length by write commands.
The new memory is based on an enhanced DRAM technology and a 0.175um CMOS process.
Operating voltage is specified at 2.5V.
Toshiba's roadmap for its FCRAM product family includes 288Mbit devices in 2003 and 512Mbit versions in 2004.
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