Product category:
Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: 1200V IEGTs
Edited by the Electronicstalk Editorial
Team on 28 May 2003
IEGTs promise low thermal resistance
Toshiba has combined trench gate semiconductor structure with ultra thin wafer technology to produce a new generation of ultra-efficient high-performance 1200V injection enhancement gate transistors.
Toshiba has combined trench gate semiconductor structure with ultra thin wafer technology to produce a new generation of ultra-efficient high-performance 1200V IEGTs (injection enhancement gate transistors) As well as providing reduced on-state voltages and losses compared with previous devices, the new IEGTs also have profiles that are up to 25% lower
This article was originally published on Electronicstalk on 8 Nov 2004 at 8.00am (UK)
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Toshiba plans to use the chips in conjunction with a new silicon nitride (SiN) material to manufacture a series of IGBT modules that will offer significant reductions in thermal resistance (Rth) and will be ideally suited to industrial control applications.
Toshiba has developed the new IEGTs by combining UTPT (ultra thin punch through) wafer technology and the company's trench gate semiconductor structure with low injection efficiency techniques.
The result is a range of devices that deliver optimum trade off between saturation voltage and turn-off energy.
Tests on a 40A, 1200V IEGT based on the new technology show improved switching characteristics and saturation voltage reductions of 23% when compared with a previous generation NPT device under identical operating conditions.
The new device can achieve a latch up capability of 400A at 125C (ten times rated current), and reverse bias safe operating area (RBSOA) and short circuit capabilities are also superior to NPT alternatives.
As with NPT devices, the UTPT IEGT has a positive temperature coefficient, which makes it appropriate for parallel connection in higher power applications.
The new 1200V UTPT-IEGT chips are ideal for industrial power conversion applications including inverters, motor drives and other high-power industrial designs.
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