IEGT modules cut their losses and run cooler

A new range of 3.3kV IEGT modules combines low thermal resistances with reduced on-state losses and a 30% reduction of off-state losses when compared with conventional modules.

Toshiba's latest 3.3kV IEGT (injection-enhanced gate transistor) module lineup combines low thermal resistances with reduced on-state losses and a 30% reduction of off-state losses when compared with conventional modules.

The result is a family of products that allow power designers to significantly minimise cooling requirements and board space without reducing output power or functionality.

Integrating multiple IEGT chips with fast recovery diodes, the MG1200FXF1US53, MG800FXF1US53 and MG400FXF2YS53 IEGT modules have respective current ratings of 1200, 800 and 400A.

Maximum junction-to-case thermal-resistance ratings for the transistor stages of the IEGT modules are as low as 8K/kW.

Typical overall module thermal resistance ratings are 9K/kW for both the MG400FXF2YS53 and MG800FXF1US53, falling to just 6K/kW in the case of the 1200A MG1200FXF1US53 module.

An aluminium silicon carbide (AlSiC) baseplate has been used to optimise thermal dissipation and to ensure high-reliability operation and extended lifetime characteristics.

Toshiba's new modules are suitable for very high-power applications including large motor drives for locomotives, trams and other traction control systems, uninterruptible power supplies (UPS), power transmission and distribution designs.

The 1200 and 800A modules are based on a one-in-one circuit configuration, while the 400A module incorporates a two-in-one circuit.

All the new modules have an isolation voltage rating of 6kV AC (for 1min) and can operate with junction temperatures between -40 and +125C.

Minimum short-circuit capability is rated at 2.5kV in all cases.

Both the MG400FXF2YS53 and the MG800FXF1US53 are supplied in packages with dimensions of 140 x 130 x 38mm, and the one-in-one MG1200FXF1US53 package measures 140 x 190 x 38mm.

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