Product category:
Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: IGBT++ EP modules
Edited by the Electronicstalk Editorial
Team on 26 November 2003
IGBT modules for high-speed switching
Four new high-frequency IGBT modules feature very low switching losses and will suit high power applications where high-speed switching is a key design requirement.
Toshiba has enhanced its family of high-frequency IGBT modules with four new parts that feature very low switching losses and that will suit high power applications where high-speed switching is a key design requirement The new enhanced 1200V IGBT++ EP modules combine Toshiba's low-injection, NPT (non-punch-through) planar semiconductor technology with a fast recovery diode technology to deliver typical turn-on and turn-off times of just 0.10 and 0.605s, respectively
This article was originally published on Electronicstalk on 8 Nov 2004 at 8.00am (UK)
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Typical turn-on switching losses range from 40mJ down to just 10mJ, while typical turn-off losses are from 40 to 8mJ.
Toshiba's new modules are ideally suited to welding, high speed motor control, medical system power supplies, UPS equipment and other high-voltage, high frequency designs.
As with previous generations of the IGBT++ family, the new parts are available in 100A (MG100Q2YS65HEP), 150A (MG150Q2YS65HEP), 200A (MG200Q2YS65HEP) and 400A (MG400Q1US65HEP) versions.
Both the 100A and 150A modules are "two-in-one" parts supplied in a standard compact F style package measuring 91.6 x 45.7 x 29.7mm.
The 200A module provides a "two-in-one" configuration in a European G package with dimensions of 108 x 62 x 23mm.
The 400A module is a "one-in-one" unit supplied in an H style package that has similar dimensions to the G style.
All the new IGBT++ modules feature a high input impedance and have electrodes that are isolated from the case.
Isolation voltage in each case is rated at 2500V AC (for 1min), while maximum junction temperature is rated at 150C.
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