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Product category: Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: SOP Advance MOSFETs
Edited by the Electronicstalk Editorial Team on 03 December 2003

Novel package advances MOSFET power
density

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A new power MOSFET package from Toshiba has the same board mounting footprint and terminal configuration as a conventional SOP-8 device yet can handle almost three times as much current.

A new power mosfet package from Toshiba has the same board mounting footprint and terminal configuration as a conventional SOP-8 device yet can handle almost three times as much current Despite this, the SOP Advance package is 37% thinner than existing SOP-8 devices

Designed for high-efficiency applications such as DC/DC convertors, power supplies, and power management systems, SOP Advance mosfets incorporate an additional aluminium strap that helps to reduce on-resistance ratings at 4.5V down to 4.8mohm.

The strap also contributes to a typical thermal resistance of just 30.7C/W, compared with 38.9C/W for conventional SOP-8 solutions.

These factors allow the new package styles to handle currents up to 40A rather than the maximum 15A offered by previous SOP-8 devices.

The first Toshiba power mosfet products to be supplied in the new SOP Advance packaging will be a 30V/35A high-speed N-channel device, a 30V/40A N-channel device, and two -30V/40A P-channel parts.

With board mounting dimensions of 6.0 x 5.0mm, the SOP Advance package has the same footprint as its SOP-8 predecessor, while a board mounting profile of just 1.0mm is 0.6mm lower than the typical height of an SOP-8.

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