Flash chips ramp up to 4Gbit density

Toshiba has developed the semiconductor industry's first 4Gbit single-die, multilevel cell (MLC), NAND Flash memory.

Toshiba has developed the semiconductor industry's first 4Gbit single-die, multilevel cell (MLC), NAND Flash memory.

Fabricated with 90nm process technology, the new chip offers double the capacity of Toshiba's present largest single-die NAND Flash memory, and will realise higher capacity Flash memory cards capable of supporting a wide range of applications.

The new 4Gbit NAND Flash memory enables faster write performance by implementing advanced design concept and adjusting the control system of the memory cell.

Samples of the new 4Gbit NAND Flash memory, TC58NVG2D4BFT00, will be available in April and mass production is expected to begin in the third quarter of 2004 at a monthly capacity of 300,000 units.

Toshiba also announced an 8Gbit NAND Flash memory IC (TH58NVG3D4BFT00) that stacks two of the 4Gbit NAND Flash memories in a single package.

Stacking the new 4Gbit NAND Flash memories in a single TSOP (thin small outline package) opens the way to more powerful applications that enhance the performance of digital consumer electronic devices while supporting their miniaturisation.

Further, Toshiba plans to introduce a sample of 16Gbit NAND Flash memory IC in the third quarter of 2004 that stacks four of the 4Gbit NAND Flash memories in a single package.

NAND Flash memory offers high density, nonvolatile data retention and is widely employed in Flash memory cards and as embedded memory in digital consumer products, such as digital still cameras, PDAs, and multifunction cell phones.

With the introduction of the new devices, Toshiba's NAND Flash memory component line-up will range from 128Mbit to 8Gbit (stacked version) devices.

The 4Gbit NAND Flash memory was developed by Toshiba and SanDisk under their 1999 comprehensive agreement on joint development of NAND Flash memory.

The new chips will be produced with 90nm process technology at the NAND Flash facility at Toshiba's Yokkaichi Operations in Japan, which is operated by Flash Vision Japan, the joint venture between Toshiba and SanDisk.

Yokkaichi Operations is also the site of the new 300mm wafer fabrication facility that Toshiba will start to construct this month in order to meet fast growing demand of NAND Flash memory.

Mass production of NAND Flash memory at the 300mm fab in Yokkaichi is expected to start in the second half of 2005.

Commenting on the new NAND Flash memory chips, Shozo Saito, Technology Executive of Toshiba's semiconductor company said: "Toshiba and SanDisk have responded to the diversifying market demands with a close collaboration dedicated to developing high capacity NAND Flash memory.

The multilevel cell was developed in response to customer demands for higher storage capacity at a lower cost.

With the introduction of the new 4 and 8Gbit NAND Flash memories, Toshiba will further leverage its leadership in the NAND Flash market".

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