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Product category: Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: SSM5G and SSM5H series
Edited by the Electronicstalk Editorial Team on 30 April 2004

Small-signal MOSFETs take diodes onboard

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Single-chip MOSFET and Schottky diode devices simplify design of high-efficiency DC/DC convertors in portable applications.

Toshiba has launched a family of high-current discrete components that integrate a small-signal mosfet (SMOS) and a Schottky barrier diode (SBD) in a single ultraminiature 5-pin surface mount package The new SSM5G and SSM5H series small signal mosfets are ideal for reducing the component count and the space required to implement high-efficiency DC/DC convertor circuitry in portable electronics equipment and other space-limited applications

Toshiba's new SMOS/SBD integrated devices comprise SSM5G01TU, SSM5G02TU, SSM5G04TU and SSM5G09TU as P-channel devices and SSM5H01TU, SSM5H03TU and SSM5H05TU as N-channel devices in a small UFV package with dimensions of 2.0 x 1.7 x 0.7mm.

Drain source voltage (VDS) of the P-channel parts is rated at -30V for the SSM5G01TU, and -12V for the remaining devices.

The N-channel devices have respective voltage ratings of 30, 12 and 20V.

Drain current ratings for P-channel types SSM5G01TU, SSM5G02TU and SSM5G04TU are specified as -1A and, in the case of the SSM5G09TU, -1.5A.

For N-channel types SSM5H01TU and SSM5H03TU a drain current up to 1.4A can be used, and the SSM5H05TU is rated at 1.5A.

Toshiba has also developed lower power versions of the integrated mosfet/diode devices.

Supplied in a smaller ESV 5-pin package measuring 1.6 x 1.2 x 0.5mm, these devices have ratings of 0.1A at 20V as N-channel or P-channel parts.

The Schottky barrier diodes integrated alongside the small signal mosfets have maximum forward voltage ratings of between 0.3 and 0.45V and offer low-loss operation.

As a result, they allow designers to implement flyback diode designs for high-efficiency DC/DC convertors without the need for additional components.

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