Product category:
Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: MG600JXH1US53
Edited by the Electronicstalk Editorial
Team on 02 June 2004
IEGT module aims for GTO replacement
Toshiba has combined multiple IEGT chips, the latest fast recovery diode technology and an advanced standard package design, to create a compact high-efficiency high-isolation 6.5kV, 600A IEGT module.
Toshiba has combined multiple IEGT (injection enhancement gate transistor) chips, the latest fast recovery diode technology, and an advanced standard package design, to create a compact, high-efficiency and high-isolation 6.5kV, 600A IEGT module The MG600JXH1US53 IEGT module will be ideal for traction control and industrial drives operating under 3kV DC or 4.2kV AC line voltage
This article was originally published on Electronicstalk on 8 Nov 2004 at 8.00am (UK)
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In particular, the module provides designers with a more compact, higher performance and more efficient alternative to conventional gate-current-driven bipolar devices like gate turn-off thyristors (GTOs) and gate commutated thyristors (GCTs).
Toshiba's MG600JXH1US53 module is based around the company's low-saturation ultrathin punch-through (UTPT) IEGT semiconductors.
Multiple IEGT ICs have been integrated alongside free wheeling diodes (FWDs) in a plastic package that incorporates an aluminium silicon carbide (ALSiC) baseplate.
Each IEGT is optimised to achieve the best possible balance between fast switching performance and low conduction loss, while the FWDs make use of optimised lifetime control techniques for improved reverse recovery characteristics.
Use of an AlSiC baseplate ensures high thermal cycling capabilities for extended reliability and lifetime operation.
In addition, the baseplate offers substantial weight savings over conventional copper solutions.
In tests of the new module, measurement of on-state and switching performance, as well as turn-off, short circuit and reverse recovery capabilities, confirm the suitability of the module for high-voltage power control applications.
In addition, estimates of thermal cycling capabilities confirm that failures attributable to flaws in the solder between the baseplate and substrate and/or in the contact between the dies and the bond wire will not be an issue during normal operating lifetimes.
The MG600JXH1US53 has a mounting profile of just 48mm and features an industry-standard footprint of 140 x 190mm, which is same as Toshiba's 3.3kV 1.2kA module.
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