Product category:
Communications ICs (Wireless)
News Release from: Toshiba Electronics Europe | Subject: TG2217CTB
Edited by the Electronicstalk Editorial
Team on 08 December 2004
MESFET switch suits multiband antennas
A new industry-leading small, low-profile GaAs MESFET SPDT switch aims for use in multiband/multimode cellular antenna switch modules, Bluetooth modules and WLAN applications.
Toshiba Electronics Europe has a new industry-leading small, low-profile gallium arsenide MESFET single-pole/dual-throw (SPDT) switch The new switch is well suited for use in multiband/multimode cellular antenna switch modules, Bluetooth modules and wireless LAN applications
This article was originally published on Electronicstalk on 8 Nov 2004 at 8.00am (UK)
Related stories
Microcontroller meets needs of modern appliances
Toshiba Electronics Europe has launched a flash microcontroller specifically designed to meet the needs of modern home appliance applications including washing machines, dryers, and dishwashers.
First 7.7-inch low-temp polysilicon LCD for eBooks
Toshiba today announced commercialisation of a 7.7-in low-temperature polysilicon TFT LCD designed for mid-size electronic book devices incorporating Microsoft ClearType display technology
Recently, demand for multiband/multimode antenna switch devices for GSM-based cellular handsets and GPS devices has been increasing, and designers have been seeking smaller, more cost-effective antenna switch solutions.
To help address these requirements, Toshiba developed this new RF SPDT in the smallest package available on the market for use in cellular ASMs, Bluetooth and WLAN.
The device features low insertion loss and high isolation to provide very good performance for such a small package.
The TG2217CTB SPDT switch is offered in a very small and low profile leadless 6-pin CSP package measuring just 1.0 x 1.0 x 0.38mm.
The device operates from DC to 3GHz, requiring two control positive voltages also acting as bias supply.
The control voltages are very low and 2.4V-switching operation is possible.
This GaAs MESFET monolithic microwave integrated circuit (MMIC) features 0.35dB insertion loss at 1GHz (0.40dB at 2GHz) and 24dB isolation at 1 and 2GHz.
Power handling performance is 17dBm P1dB at 2.5GHz, which is very good for the extremely small and low profile package.
Samples of Toshiba's TG2217CTB will be available in December 2004, priced at $0.20 each.
Volume production is scheduled to begin in Q1 of 2005, at which time production pricing will become available.
To improve cost effectiveness, Toshiba's new more efficient, chip scale package (CSP) mass production line will be used to manufacture this device.
• Toshiba Electronics Europe: contact details and other news
• Email this article to a colleague
• Register for the free Electronicstalk email newsletter
• Electronicstalk Home Page

