Product category:
Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: GT30F121 and GT30G121
Edited by the Electronicstalk Editorial
Team on 14 April 2006
IGBTs oust MOSFETs from plasma displays
High-current low-loss discrete IGBTs are designed to meet the power supply requirements of plasma display panels.
Toshiba Electronics Europe has introduced a new range of high-current low-loss discrete IGBTs designed to meet the power supply requirements of plasma display panels (PDPs) The new devices will allow designers to improve power supply performance and efficiency by using IGBTs rather than MOSFETs in PDP sustain and energy recovery circuits
This article was originally published on Electronicstalk on 8 Nov 2004 at 8.00am (UK)
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The GT30F121 and GT30G121 IGBTs are supplied in compact fully isolated TO-220SIS packages.
Both devices use copper connectors rather than traditional aluminium bonding wire.
Collector-emitter voltage ratings are 300 and 400V respectively.
Maximum collector current rating is 120A for each device, while typical input capacitance for the IGBTs is remarkably low at 1320pF.
Toshiba's new devices represent the fifth generation of the company's high-power IGBT technology and are based on a structure that integrates a trench semiconductor process with low-injection enhancement-mode N-channel technology.
Trench technology ensures low saturation voltage and low conduction loss, and enhancement mode ensures fast switching characteristics.
With a collector current of 120A and a gate-emitter voltage of 15V, the GT30F121 and the GT30G121 have typical saturation voltage ratings of just 2.25 and 2.55V, respectively.
Typical total switching time is 1.2us for the 300V device and 950ns for the 400V IGBT.
Both of the new IGBTs will operate with a junction temperature of up to 150C and have a typical collector power dissipation of 35W (at 25C),.
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