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Product category: Memory Devices and Modules
News Release from: Toshiba Electronics Europe | Subject: LBA-NAND Flash
Edited by the Electronicstalk Editorial Team on 04 August 2006

Addressing mode simplifies Flash
integration

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High-capacity NAND Flash memories will integrate logical block addressing.

Toshiba Corporation has brought logical block addressing (LBA) to NAND Flash memory, and will launch LBA-NAND, a new lineup of high-capacity devices integrating the new addressing method LBA-NAND is designed for use in mobile phones and mobile consumer products such as digital audio players and personal media players

The technology will support manufacturers in developing products that can take full advantage of advances in NAND Flash memory capacity while minimising development costs.

Toshiba will start to release samples of the new NAND Flash from August 2006.

NAND Flash memory currently uses the physical address access method that defines each physical page of a memory, from the chip to the block, to the page and down to the cell.

Product manufacturers have to develop host side and driver specifications that can recognise and accommodate this physical addressing, and must bear the R and D costs for developing new product specifications and drivers to absorb advances in NAND Flash memory capacity.

The logical address access method of LBA assigns each cell a unique address that is not geometry dependent.

The first cell is simply 0, and numbering continues to cover every cell.

Memory increases can be accommodated by assigning a new address to each cell.

This approach also allows block management, error correction (ECC process) and wear-levelling - all of which are conventionally controlled by the host side - to be handled on the memory side by the LBA-NAND controller.

LBA-NAND is also fully compliant with the standard NAND Flash interface.

As a result, LBA-NAND supports developers in minimising development costs and improving time to market for new and upgraded products.

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