Product category:
Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: SSM6J51TU and SSM3J120TU
Edited by the Electronicstalk Editorial
Team on 06 November 2006
Miniature MOSFETs cut on-resistance
Small-signal high-efficiency P-channel MOSFETs combine high current switching functionality with low on-resistance, low voltage operation and ultracompact form factors.
Toshiba Electronics Europe (TEE) has launched two new small-signal high-efficiency P-channel MOSFETs that combine high current switching functionality with low on-resistance, low voltage operation and ultracompact form factors The new MOSFETs address requirements of mobile phones, portable navigation systems and other handheld devices, which are constantly offering new functionalities that eventually lead to an increase in total power consumption
This article was originally published on Electronicstalk on 8 Nov 2004 at 8.00am (UK)
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This increasing load to the battery calls for intelligent power management solutions requiring very efficient MOSFETs for load switching.
The SSM6J51TU and SSM3J120TU have dimensions of just 2.0 x 2.1 x 0.7mm, fitting on SOT-363 and SOT-323 footprints, respectively.
These MOSFETs in UF6 (SSM6J51TU) and UFM (SSM3J120TU) packages are ideal for high-performance load switching and power management applications in mobile phones or other battery-powered applications with severe PCB space constraints.
Both of the new MOSFETs will operate with gate-source voltages down to just 1.5V and are rated for DC drain and pulse currents of up to 4 and 8A, respectively.
With a gate-source voltage of 1.5V, typical on-resistance is just 60mohm, falling to below 40mohm in the case of a VGS of 2.5V.
This level of performance, combined with a maximum gate threshold voltage of 1V, make these MOSFETs ideally suited to main power switch applications.
Both the SSM6J51TU and SSM3J120TU offer maximum gate-source voltage ratings of +/-8V and are designed to operate with channel temperatures of up to 150C.
The SSM6J51TU features a maximum drain-source voltage of -12V, whereas the SSM3J120TU offers -20V.
Maximum rated power dissipation for both devices is 500mW.
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