Product category:
Memory Devices and Modules
News Release from: Toshiba Electronics Europe | Subject: 16Gbit NAND Flash memories
Edited by the Electronicstalk Editorial
Team on 26 January 2007
NAND Flash memory chips rise to 16Gbit
Toshiba is introducing 8 and 16Gbit NAND Flash memory devices, fabricated using cutting-edge 56nm process technology codeveloped with SanDisk Corp of Milpitas, California.
Toshiba is introducing 8 and 16Gbit NAND Flash memory devices, fabricated using cutting-edge 56nm process technology codeveloped with SanDisk Corp of Milpitas, California The 16Gbit device is the highest density single-chip NAND Flash memory yet achieved
This article was originally published on Electronicstalk on 8 Nov 2004 at 8.00am (UK)
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Advancing from limited production of engineering samples at the end of 2006, Toshiba is now increasing shipments of commercial samples of new 8Gbit single-chip multilevel-cell (MLC) NAND Flash memories, the current mainstream density, with availability from today, and will transition to mass production by the end of this month.
Going forward, Toshiba will start manufacture of 16Gbit NAND Flash memories, the highest density single-chip NAND Flash memory yet achieved, in April this year.
The adoption of multilevel-cell (MLC) technology and improved programming efficiency allows the new chips to offer high density and write performance.
Application of 56nm process technology doubles the memory density per chip achieved with 70nm technology, achieving the largest single-chip density in NAND Flash memory.
A write performance of 10Mbyte/s, twice that of Toshiba's present MLC products, reflects the efficiency obtained with advanced process technology and doubling page size, the amount of data that can be written at one time, from 2112 to 4314byte.
By combining advanced process and MLC technologies, and through continued advances in production efficiency, Toshiba will enhance cost competitiveness and meet the needs of the NAND Flash memory market.
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