MOSFETs boost drain current

The TPCA8012-H and TPCA8019-H N-channel MOSFETs extend the UMOS V-H series with higher drain current of 40 and 45A (maximum) and lower R(DSON) of 4.9 and 3.1mohm, respectively.

Toshiba America Electronic Components (TAEC) has added two new devices to its UMOS V-H series high-speed switching MOSFETs to provide higher drain current and lower on-state resistance, combined with the power efficiency advantages of the other members of the product family.

The TPCA8012-H and TPCA8019-H N-channel MOSFETs extend the UMOS V-H series with higher drain current of 40 and 45A (maximum) and lower R(DSON) of 4.9 and 3.1mohm, respectively.

The UMOS V-H series MOSFETs are targeted for use in synchronous DC/DC convertors in power supplies for servers, desktop and mobile computers and portable electronics devices.

"Our UMOS V-H series MOSFETs are designed to reduce the size and improve the power efficiency of synchronous rectification DC/DC convertors for notebook PCs, servers and on-board power supplies".

"The first members of the series have been well received and these new devices provide higher performance options for power supply designers", said Jeff Lo, Business Development Manager, Discrete Power Products, for TAEC.

The new devices join nine other members of the UMOS V-H series to provide a range of drain current, drain-source voltage and a selection of other performance characteristics to meet various application requirements.

Compared to previous process technology from Toshiba, the UMOS V-H series improves many of the key parameters required for better power efficiency of low-side MOSFETs in a synchronous DC/DC convertor, including lower on-state resistance and reduced self-turn-on loss, achieved through lower gate-to-drain capacitance, lower gate resistance and an optimised gate threshold voltage.

On the high-side MOSFET, Toshiba UMOS V-H technology enables fast switching, achieved through low gate switch charge and gate resistance.

The TPCA8012-H and TPCA8019-H are offered in SOP Advance packages with a footprint of 5 x 6mm to help minimise board area and device temperature.

The TPCA8012-H features maximum drain current of 40A, a drain-source voltage maximum rating of 30V and an on-resistance of 4.9mohm.

TPCA8019-H is also designed to operate with a 30V drain-source voltage maximum rating, with a maximum drain current of 45A and an on-resistance of 3.1mohm.

The SOP Advance package from Toshiba features a 41% lower profile than a standard SOP-8 package and enables approximately 47% higher power dissipation.

UMOS V is a fifth-generation process technology in the Toshiba fast switching series.

It uses a trench gate structure that combines low on-resistance with fast switching.

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