Product category:
Discrete Power Devices
News Release from: Toshiba Electronics Europe | Subject: TPCA8012-H and TPCA8019-H
Edited by the Electronicstalk Editorial
Team on 18 January 2008
MOSFETs boost DC/DC convertor efficiency
High-speed switching MOSFETs provide higher drain current and lower on-state resistance, combined with the power efficiency advantages of the UMOS V-H Series.
Toshiba Electronics Europe (TEE) has added two new devices to its UMOS V-H Series high-speed switching MOSFETs to provide higher drain current (ID), and lower on-state resistance, combined with the power efficiency advantages of the other members of the product family Developed by Toshiba, the TPCA8012-H and TPCA8019-H N-channel MOSFETs extend the UMOS V-H Series with higher drain currents of 40 and 45A (maximum) and lower on-resistances of 4.9 and 3.1mohm, respectively (maximum value at VGS = 10V)
This article was originally published on Electronicstalk on 16 Oct 2007 at 8.00am (UK)
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The UMOS V-H Series MOSFETs are targeted for use in synchronous DC/DC convertors in power supplies.
The new devices join nine other members of the UMOS V-H Series to provide a range of drain current, drain-source voltage, and a selection of other performance characteristics to meet various application requirements.
Compared with previous process technology from Toshiba, the UMOS V-H Series improves many of the key parameters required for better power efficiency of low-side MOSFETs in a synchronous DC/DC convertor, including lower on-state resistance and reduced self-turn-on loss, achieved through lower gate-to-drain capacitance (Cgd), lower Cgd/Cgs ratio, lower gate resistance (Rg), and optimised gate threshold voltage.
On the high-side MOSFET, Toshiba UMOS V-H technology enables fast switching, achieved through low gate switch charge (QSW) and gate resistance (Rg).
The TPCA8012-H and TPCA8019-H are offered in SOP Advance packages with a footprint of 5.0 x 6.0mm to help minimise board area and device temperature.
The TPCA8012-H features maximum drain current of 40A, a drain-source voltage maximum rating of 30V and an on-resistance of 4.9mohm (maximum at VGS = 10V).
TPCA8019-H is also designed to operate with a 30V drain-source voltage maximum rating, with a maximum drain current of 45A and an on-resistance of 3.1mohm (maximum at VGS = 10V).
The SOP Advance package from Toshiba features a 41% lower profile than a standard SOP-8 package, and enables approximately 47% higher power dissipation.
UMOS V is a fifth generation process technology in the Toshiba fast switching series.
It utilises a trench gate structure that combines low RDSON with fast switching.
Low gate resistance, a lower gate-to-drain capacitance (Cgd), and lower Cgd /Cgs ratio also help reduce the amount of self-turn on loss.
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