Small signal MOSFETs run from 1.2V supplies

Devices operate with a gate drive voltage of just 1.2V, and so are ideally suited to high-speed and analogue switching in portable battery-powered equipment.

Toshiba Electronics Europe (TEE) has launched a comprehensive lineup of miniature small-signal MOSFETs that combine a low driving voltage of 1.2V with low on resistance.

Enabling further reduction in switching voltages for battery operated equipment, the devices within the new SSMx35 MOSFET series operate with a gate drive voltage (VGS) of just 1.2V and are ideally suited to high-speed and analogue switching in portable, battery-powered equipment.

The series offers a wide range of single or dual N-channel and P-channel options as well as a dual version that integrates N-channel and P-channel devices in the same package.

Designed to minimise board space, the MOSFETs are supplied in small, thin packages ranging in size from a leadless version of just 1.0 x 0.6 x 0.38mm to versions in SOT-363 package size (2.0 x 2.1 x 0.9mm).

The N-channel devices are rated for maximum DC current of 180mA, whereas the P-channel MOSFETs are rated to -100mA.

Maximum on-resistance ratings (with a 1.2V drive voltage) are 20 and 44ohm, respectively.

The single (1-in-1) N-channel (SSM3K35xx) and P-channel (SSM3J35xx) MOSFETs are available in CST3 (1.0 x 0.6 x 0.38mm), VESM (1.2 x 1.2 x 0.5mm) and SSM (1.6 x 1.6 x 0.7mm) packaging.

Dual transistor versions (2-in-1) can be supplied as dual N-channel (SSM6Nxx), dual P-channel (SSM6Pxx) and N- plus P-channel combination devices (SSM6L35xx) in SOT-563 and SOT-363 package variants.

Back to top