Product category:
Discrete Power Devices
News Release from: Vishay Siliconix | Subject: Si4390DY, Si4392DY, Si7390DP and Si7392DP
Edited by the Electronicstalk Editorial
Team on 04 July 2003
Novel MOSFETs promise to boost DC/DC
performance
A new range of power MOSFETs uses a breakthrough TrenchFET technology to combine greatly reduced switching losses with ultralow on-resistance.
A new range of power mosfets uses a breakthrough TrenchFET technology to combine greatly reduced switching losses with ultralow on-resistance Reducing gate-drain capacitance by half while maintaining superb on-resistance performance, the new Vishay Siliconix WFET power mosfets offer the industry's best on-resistance times gate charge figure of merit: 60% lower than previous-generation devices
This article was originally published on Electronicstalk on 17 Jun 2003 at 8.00am (UK)
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Lower on-resistance means that more power can be converted in less space, and lower gate-drain capacitance means more efficient switching at high frequencies.
In a breakthrough that will enable the design of much more efficient DC/DC convertors, Vishay's new WFET power mosfet technology combines both capabilities in a single device.
Vishay's innovative WFET power mosfets use a thicker gate oxide at the bottom of the silicon trench to enable a two-thirds reduction in Crss with minimal impact on on-resistance performance.
Patent-pending techniques allow a further cell-density increase, which lowers on-resistance while maintaining switching performance.
The four WFET power mosfets released today are designed to provide efficient high-side operation - running cooler or handling higher output current with the same efficiency - in notebook CPU core DC/DC convertors in single- and multiphase configurations with a 20A (Si4390DY and Si7390DP) to 40A (Si4392DY and Si7392DP) output current.
The Si4390DY and Si4392DY are offered in the Little Foot SO-8 and, for improved thermal performance, the Si7390DP and Si7392DP are offered in the PowerPAK SO-8.
Future WFET power mosfets will include devices aimed at desktop computer and primary DC/DC convertor applications with breakdown voltages ranging from 20 to 200V.
Samples and production quantities of the Si4390DY, Si4392DY, Si7390DP and Si7392DP are available now with lead times of 8 to 10 weeks for larger orders.
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