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MOSFETs claim new lows of on-resistance
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Vishay Siliconix product story
Edited by the Electronicstalk editorial team
Feb 2, 2004
A new trio of 250V N-channel TrenchFET power MOSFETs offer the lowest on-resistance available in the SO-8, PowerPAK SO-8 and D2PAK packages for this voltage rating.
A new trio of 250V N-channel TrenchFET power mosfets offer the lowest on-resistance available in the SO-8, PowerPAK SO-8, and D2PAK packages for this voltage rating.
The Si4434DY (Little Foot SO-8), Si7434DP (PowerPAK SO-8), and SUM45N25 58 (D2PAK) are designed to serve as primary switches in DC/DC convertors, including forward convertors and half-bridge convertors, as well as in AC/DC convertors and inverters, for telecomms power supplies, distributed architectures and miniature power modules.
The new devices offer greatly improved on-resistance values compared with competing devices of the same size.
The Si4434DY and Si7434DP both feature a maximum on-resistance value of 155mohm at a 10V gate drive and a typical gate charge value of 34nC.
In the low-thermal-resistance D2PAK package, the SUM45N25 58 features on-resistance of 58mohm, a gate charge value of 95nC, and a maximum junction temperature rating of 175C.
Samples and production quantities of the 250V Si4434DY, Si7434DP, and SUM45N25 58 N-channel power mosfets are available now, with lead times of 10 to 12 weeks for larger orders.
Pricing for U.S.
delivery in 10,000-piece quantities starts at $1.55.
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