Product category:
Discrete Power Devices
News Release from: Vishay Siliconix | Subject: Si7820DN
Edited by the Electronicstalk Editorial
Team on 07 April 2004
Tiny claims for power MOSFET
The new N-channel Si7820DN TrenchFET power MOSFET is the smallest 200V device on the market suited for power switching.
In a critical advance that will help designers meet the stringent power-density and packaging requirements of new subbrick power architectures, Siliconix has released the industry's first 200V power mosfet available in the compact PowerPAK1212-8 package Intended for primary DC/DC switching applications for power supplies in fixed telecomms networks and routers, the new N-channel Si7820DN TrenchFET power mosfet is the smallest 200V device on the market suited for power switching
This article was originally published on Electronicstalk on 17 Jun 2003 at 8.00am (UK)
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Novel power package reduces MOSFET on-resistance
Siliconix has released 14 industry-leading PowerPAK power MOSFETs featuring improved package technology that yields lower on-resistance devices.
The PowerPAK 1212-8 package measures 3.3 x 3.3mm with a low 1.07mm height profile, offering smaller dimensions than SO-8 solutions while providing greatly superior thermal performance.
Power dissipation for the PowerPAK 1212 8 package is 3.8W, nearly double that of any mosfet device with a TSSOP-8-size footprint or smaller.
Typical thermal resistance is just 1.9C/W compared with 16C/W for the SO-8.
In addition to space savings and its high-voltage capability, the Si7820DN features on-resistance of 240mohm and a typical gate charge of 12.1nC (at a 10V gate drive).
The new power mosfet is rated for an operating junction and storage temperature range of -55 to +150C.
Samples of the 200V Si7820DN TrenchFET power mosfet are available now, with lead times of 10 to 12 weeks for production quantities.
Pricing for US delivery in 10,000-piece quantities is $1.26.
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