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Product category: Discrete Power Devices
News Release from: Vishay Siliconix | Subject: Si7820DN
Edited by the Electronicstalk Editorial Team on 07 April 2004

Tiny claims for power MOSFET

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The new N-channel Si7820DN TrenchFET power MOSFET is the smallest 200V device on the market suited for power switching.

In a critical advance that will help designers meet the stringent power-density and packaging requirements of new subbrick power architectures, Siliconix has released the industry's first 200V power mosfet available in the compact PowerPAK1212-8 package Intended for primary DC/DC switching applications for power supplies in fixed telecomms networks and routers, the new N-channel Si7820DN TrenchFET power mosfet is the smallest 200V device on the market suited for power switching

The PowerPAK 1212-8 package measures 3.3 x 3.3mm with a low 1.07mm height profile, offering smaller dimensions than SO-8 solutions while providing greatly superior thermal performance.

Power dissipation for the PowerPAK 1212 8 package is 3.8W, nearly double that of any mosfet device with a TSSOP-8-size footprint or smaller.

Typical thermal resistance is just 1.9C/W compared with 16C/W for the SO-8.

In addition to space savings and its high-voltage capability, the Si7820DN features on-resistance of 240mohm and a typical gate charge of 12.1nC (at a 10V gate drive).

The new power mosfet is rated for an operating junction and storage temperature range of -55 to +150C.

Samples of the 200V Si7820DN TrenchFET power mosfet are available now, with lead times of 10 to 12 weeks for production quantities.

Pricing for US delivery in 10,000-piece quantities is $1.26.

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