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Product category: Discrete Power Devices
News Release from: Vishay Siliconix | Subject: Micro Foot Si8413DB
Edited by the Electronicstalk Editorial Team on 31 May 2004

Chip-scale MOSFET performs like a big
boy

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A new chip-scale P-channel power MOSFET is claimed to offer the industry's lowest on-resistance of any such device with a footprint area under 3mm2.

A new chip-scale P-channel power MOSFET is claimed to offer the industry's lowest on-resistance of any such device with a footprint area under 3mm2 Aimed at battery switch, power amplifier, load switch, and charger applications, the new Micro Foot Si8413DB delivers maximum on-resistance of just 48mohm at a 4.5V gate drive, a 31% improvement over the next-best such competing chip-scale MOSFET on the market

Maximum on-resistance at a 2.5V gate drive is a low 63mohm.

Breakdown voltage for the new device is -20V.

Measuring just 1.54 x 1.54 x 0.62mm high, the Si8413DB exhibits comparable performance to devices in the much larger TSOP-6 package while occupying a quarter of the space.

When used in PDAs, cellphones, pagers, and other portable electronics, the new Micro Foot device gives designers the opportunity to make their end product smaller and thinner, to add more features, and/or to extend run times between battery charges.

Vishay Siliconix Micro Foot devices use a solder bump process along with proprietary techniques developed at Siliconix to eliminate the need for an outer package to encase the power MOSFET die, greatly reducing the size of the devices required to switch power and analogue signals in cellphones and other handheld electronic systems.

As the latest product in the Micro Foot family, the Si8413DB offers a respective 17 and 31% improvement in maximum on-resistance compared with the previously released Si8411DB and Si8401DB.

Samples and production quantities of the Si8413DB are available now, with lead times of 12 weeks for larger orders.

Pricing in 100,000-piece quantities is $0.25 per unit.

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