Product category:
Discrete Power Devices
News Release from: Vishay Siliconix | Subject: Si7444DP etc
Edited by the Electronicstalk Editorial
Team on 22 April 2005
MOSFETs resist thermal effects
Siliconix has developed the industry's first N-channel MOSFETs that combine a high 3.4V threshold voltage with on-resistance as low as 2.7mohm.
Siliconix has developed the industry's first N-channel MOSFETs that combine a high 3.4V threshold voltage with on-resistance as low as 2.7mohm The 10 new MOSFETs, available in 40 and 60V versions, are intended for use in high-temperature, high-current applications with inductive loads in the automotive, industrial and fixed telecomms industries, such as high-side switches, motor drives and 12V boardnets
This article was originally published on Electronicstalk on 17 Jun 2003 at 8.00am (UK)
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When MOSFETs operate in high-temperature, high-current environments, they can turn on spontaneously if their threshold voltage, impacted by heat, starts to approach 0V.
Until now, this posed a dilemma for designers.
One solution was the addition of a negative voltage driver to the circuit, but the drawbacks were increased circuit size, cost and complexity.
Another solution would be to use a device with a high threshold voltage, but the effect in this case is an undesirable increase in on-resistance.
This new power MOSFET family provides a way out of this dilemma with high-density silicon technology that allows the same device to deliver both low on-resistance and a high threshold voltage that avoids the problem of spontaneous turn-on in automotive, industrial, and other applications involving high temperatures and high levels of current.
Available in the DPAK, D2PAK and PowerPAK SO-8 packages, samples and production quantities of the new MOSFETs are available now with lead times of 10 to 12 weeks for larger orders.
Pricing for US delivery in 100,000-piece quantities starts at $1.35 per piece.
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