Compact packaging cuts MOSFET on-resistance

Seventeen new power MOSFETs offer exceptionally low on-resistance values down to 3.7mohm in the compact PowerPAK 1212-8 package.

Seventeen new power MOSFETs offer exceptionally low on-resistance values down to 3.7mohm in the compact PowerPAK 1212-8 package.

These TrenchFET Gen II devices deliver significant space savings with dimensions of just 3.x 3.3 x 1mm - just one-third the size of the SO-8 package - as well as low thermal resistance of 2C/W for an eightfold improvement when compared with SO8 devices.

Intended for synchronous rectification, synchronous buck, and intermediate switching applications in point-of-load (POL) convertors and high-density DC/DC convertors used in datacomms systems, the new power MOSFETs enable designers to reduce board space dramatically and/or increase functionality without sacrificing performance.

With their excellent electrical performance, the power MOSFETs introduced today serve as a viable replacement for SO-8 devices in many applications.

The 12 to 40V single N-channel devices feature on-resistance values ranging from 3.7 to 10mohm at a 4.5V gate drive, and they include: the 12V Si7104DN; 20V Si7106DN, Si7108DN, and Si7110DN; 30V Si7112DN and Si7114DN; and 40V Si7116DN.

Dual N-channel devices offer on-resistance values down to 36mohm and include the 30V Si7212DN and Si7214DN, 40V Si7222DN and 60V Si7220DN.

Also new in the PowerPAK 1212-8 package are the single-channel 60V Si7120DN, 75V Si7812DN, 150V Si7818DN, 220V Si7302DN and 250-V Si7802DN.

These devices feature on-resistance values ranging from 135 to 435mohm at a 10V gate drive.

The 200V Si7820DN was previously released.

Samples and production quantities of the new power MOSFETs in the PowerPAK 1212-8 package are available now, with lead times of 12 weeks for larger orders.

Pricing for US delivery in 100,000-piece quantities starts at $0.50.

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