Product category:
Discrete Power Devices
News Release from: Vishay Siliconix
Edited by the Electronicstalk Editorial
Team on 16 June 2006
Licence provides Korean source for
trench MOSFETs
Vishay has licensed its Siliconix TrenchFET power MOSFET technology to KEC, the largest manufacturer of discrete electronic components in Korea.
Vishay Intertechnology has signed an agreement to license its Vishay Siliconix TrenchFET power MOSFET technology to KEC, the largest manufacturer of discrete electronic components in Korea In signing the agreement with Vishay, KEC will now be able to offer its customers power MOSFETs built on industry-leading TrenchFET technology, the first such products to be manufactured in Korea
This article was originally published on Electronicstalk on 17 Jun 2003 at 8.00am (UK)
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The Vishay Siliconix TrenchFET technology, which has progressed through several generations of advancements since its original introduction in the 1990s, enables power MOSFETs with the industry's lowest on-resistance, a figure of merit that translates into smaller, more power-efficient, and cooler-running devices and end products.
As the first manufacturer of trench power MOSFETs in Korea, KEC will address a local market for power MOSFETs valued yearly at 250 billion Won (US $266.7 million).
Until now, demand for trench power MOSFETs in Korea has been supplied entirely by imported devices.
Siliconix pioneered the development of vertical trench power MOSFETs to overcome the limitations of planar DMOS devices, where a parasitic junction FET effect places a severe limit on the benefit of increasing transistor cell densities.
TrenchFET power MOSFETs overcome this barrier by vertically redirecting the current flow in the device's channel in a direct path between the topside source and the backside drain contact.
The result is a high level of scalability that allows successive generations of TrenchFET silicon technology to provide significant increases in power MOSFET performance.
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