N-channel MOSFETs feature double-sided cooling

N-channel 20, 30 and 40V PolarPAK MOSFETs with double-sided cooling give designers a new way to reduce system size and cost through better MOSFET thermal performance.

Vishay Intertechnology is adding new N-channel 20, 30 and 40V devices to its PolarPAK family of power MOSFETs with double-sided cooling, giving designers a new way to reduce system size and cost through better MOSFET thermal performance.

Aimed at synchronous rectification, point-of-load convertors and ORing applications in telecom and data communications systems, the new Vishay Siliconix PolarPAK devices announced today deliver up to 48 % better on-resistance and 12 % better on-resistance-times-gate-charge performance than the next-best devices on the market with double-sided cooling.

These improved specifications translate into lower conduction and switching losses that reduce power consumption in end systems.

The dual heat-dissipation paths provided by PolarPAK's double-sided cooling construction allow high current densities in systems with forced air cooling, enabling more compact designs and/or the ability to reduce the number of paralleled MOSFETs.

To the extent that paralleling is needed at all, PolarPAK simplifies such designs with its straightforward pinout, minimising inductance from board layouts and thus improving efficiency, especially at higher frequencies.

The PolarPAK devices released today share the same footprint area as the standard SO-8, yet are twice as thin with a height profile of just 0.8 mm.

On-resistance for the new 20V SiE810DF and SiE808DF, 30V SiE806DF and 40V SiE812DF ranges from 1.4 to 2.6mohm.

Their on-resistance-times-gate-charge figures of merit (FOMs) are exceptionally low as well.

With FOMs of 127.5 and 135.2, respectively, the 30 and 40V devices offer nearly the same FOM for synchronous rectification applications while allowing the choice of the higher rating for applications that can use the additional headroom provided by the 40V breakdown voltage device.

For applications in which minimising switching losses is more critical than low conduction losses, Vishay is also releasing two PolarPAK devices with somewhat higher on-resistance.

At a 10V gate drive, the 30V SiE830DF is rated for 4.2mohm, and the 40V SiE832DF is rated at 5.5mohm.

In addition to their reduced power-consumption and thermal-management benefits, Vishay Siliconix PolarPAK power MOSFETs are designed to give manufacturers maximum flexibility, reliability, and ease in handling.

A fixed footprint and pad layout, independent of die size across the range of the family, eliminates the need for redesign when newer generations of silicon are introduced.

Their standard leadframe and plastic encapsulation construction provide better die protection.

As a result, PolarPAK has quickly earned the distinction of being the first MOSFET package with double-sided cooling to be sourced by multiple manufacturers.

Samples and production quantities of the new PolarPAK power MOSFETs are available now, with lead times of 8 to 10 weeks for larger orders.

Pricing in 100,000-piece quantities is US $1.50 per piece.

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