Reduced resistance cuts load switching losses

N-channel MOSFETs feature 20V drain-to-source and gate-to-source voltage ratings and offer on-resistance specifications as low as 1.6mohm in the SO-8 footprint area

Three new power MOSFETs for ORing applications promise best-in-class on-resistance performance with a choice of three package options.

In enterprise server networks, the ORing function switches on the redundant power supply when the main supply fails to ensure continuous power to the system.

Because the MOSFETs carry the entire load from the functioning power supply, reducing the power losses in these devices can significantly lower energy costs.

The three new N-channel MOSFETs feature 20V drain-to-source and gate-to-source voltage ratings and offer on-resistance specifications as low as 1.6mohm in the SO-8 footprint area.

Compared with competing devices, on-resistance performance for these Vishay Siliconix power MOSFETs is up to 36 % lower than the next best devices on the market with the same voltage specifications and package types.

Designers will choose among the three TrenchFET Gen II devices being announced today depending on the specific circuit and thermal requirements of their applications.

With 36% lower on-resistance than any similar power MOSFET in the standard SO-8 package, the new Si4398DY delivers an on-resistance rating of 2.8mohm at 10V.

In addition to ORing applications, the Si4398DY can be used for low-power synchronous rectification, DC/DC and point-of-load power conversion circuitry.

For low-voltage power supplies, the Si4398DY offers the best on-resistance ratings available in the SO-8 package.

As power increases, power MOSFETs in thermally enhanced packages can conduct more current in the same footprint, reducing the number of devices needed for the application.

This allows the power density to be increased with a 12V rail voltage topology in AC or DC switch-mode power supplies requiring redundant circuitry.

For optimal heat dissipation in still-air environments, Vishay is releasing the Si7866ADP in the thermally enhanced PowerPAK SO-8 package.

With a maximum on-resistance rating of 2.4mohm at 10V, the Si7866ADP combines low conduction losses with robust thermal performance.

Maximum junction-to-case thermal resistance is a typical 1.5C/W, compared with the 16C/W for junction-to-foot thermal resistance offered by the standard SO-8.

In addition to ORing, its target applications include synchronous buck convertors in desktop computers and low-output-voltage synchronous rectification.

For implementations with forced-air cooling, the previously released SiE808DF in the PolarPAK package, with dual heat dissipation paths on the top and bottom of the device, offers 20% lower on-resistance than the next best device with double-sided cooling.

Its extraordinarily low maximum on-resistance rating is 1.6mohm at 10V.

Samples and production quantities of the Si4398DY, Si7866ADP and SiE808DF are available now, with lead times of 12 to 14 weeks for larger orders.

Pricing in 100,000-piece quantities starts at US $0.75 each.

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