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Product category: Discrete Power Devices
News Release from: Vishay Siliconix | Subject: Si8441DB and Si8451DB
Edited by the Electronicstalk Editorial Team on 10 April 2008

Low-profile MOSFETs cut on-resistance

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Typical applications include load switching and battery protection in portable devices such as cellphones, PDAs, digital cameras, MP3 players and smart phones.

A new 20V P-channel TrenchFET power MOSFET in a Micro Foot chipscale package promises the industry's lowest profile and on-resistance for this device type The Vishay Siliconix Si8441DB offers an ultracompact 0.59mm profile and a footprint area of 1.5 x 1mm

It is also the first device of its kind to offer an on-resistance rating at 1.2V.

Typical applications for the new device will include load switching and battery protection in portable devices such as cellphones, PDAs, digital cameras, MP3 players and smart phones.

The Si8441DB offers a low on-resistance range from 600mohm at 1.2V VGS to 80mohm at 4.5V VGS, with a maximum gate-source voltage of +/-5V.

The low on-resistance rating at 1.2V reduces the need for level-shift circuitry, thus saving space in portable electronics designs.

Also available in the same Micro Foot package is the 20V P-channel Si8451DB.

Rated for a maximum gate-to-source voltage of 8V, on-resistance for the Si8451DB ranges from 200mohm at 1.5V to 80mohm at 4.5V, the best such values ever achieved for a device with these voltage ratings.

As portable electronics become more compact and their functionality increases, the available board space for power management circuitry decreases significantly.

To meet consumer expectations for battery runtimes between charges, designers require smaller MOSFET packages with low power consumption - which is exactly what the Si8441DB and Si8451DB provide.

Samples and production quantities of these new Micro Foot chipscale power MOSFETs are available now, with lead times of 10 to 12 weeks for larger orders.

Pricing for US delivery in 100,000-piece quantities is $0.21.

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