P-channel trench MOSFETs on the way

The Zetex advanced trench MOSFET process is set to yield its first P-channel devices during the second quarter of 2002.

The Zetex advanced trench mosfet process is set to yield its first P-channel devices during the second quarter of 2002.

Operated at the company's UK fabrication plant, the P-UMOS line will produce 30, 60 and 100V parts.

Zetex began producing its first N-channel trench mosfets in February 2001.

Differentiated by an innovative recessed gate architecture, the Zetex trench mosfet technology is characterised by an extremely low on-resistance and gate charge attractive to a broad range of high efficiency, high frequency applications.

Cell density of the P-UMOS process will be 45 million cells per square inch.

Zetex' Product Development Manager Peter Blair commented, "It's well known that P-channel trench mosfets are tricky to make.

However, the unique nature of the Zetex UMOS process recipe allows us to overcome the manufacturing challenges and introduce a line of P-channel products to perfectly complement our already well established N-channel devices".

He continued, "The P-channel mosfets we will be launching from May of this year are higher voltage rated and are specifically designed to handle noisy supply rails and drive heavy inductive loads.

Motor driving, LCD backlighting and high power audio will be typical target applications for the new parts".

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